IXTN170P10P Datasheet - IXYS

IXTN170P10P, Power MOSFET

PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTN170P10P D G S S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg.

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IXTN170P10P-IXYS.pdf

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Datasheet Details

Part number:

IXTN170P10P

Manufacturer:

IXYS

File Size:

148.86 KB

Description:

Power MOSFET

Features

* International Standard Package
* miniBLOC, with Aluminium Nitride Isolation
* Rugged PolarPTM Process
* High Current Handling Capability
* Fast Intrinsic Diode
* Avalanche Rated
* Low Package Inductance Advantages
* Easy to Mount
* Space Savings
* High Powe

Applications

* High-Side Switches
* Push Pull Amplifiers
* DC Choppers
* Automatic Test Equipment
* Current Regulators © 2017 IXYS CORPORATION, All Rights Reserved DS99975C(5/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = -10V, ID = 0.5
* ID25, Not

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IXTN170P10P Power MOSFET IXYS

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