IXTN170P10P Datasheet - IXYS

IXTN170P10P - Power MOSFET

PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTN170P10P D G S S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 50/60 Hz, RMS t = 1 minute IISOL  1mA t = 1 second Mounting Torque Terminal Connection Torque Maximum Ratings -100 V -100 V .

IXTN170P10P Features

* International Standard Package

* miniBLOC, with Aluminium Nitride Isolation

* Rugged PolarPTM Process

* High Current Handling Capability

* Fast Intrinsic Diode

* Avalanche Rated

* Low Package Inductance Advantages

* Easy to Mount

* Space Savings

* High Powe

IXTN170P10P-IXYS.pdf