IXTN21N100 Datasheet - IXYS Corporation

IXTN21N100 High Voltage MegaMOSTMFETs

High Voltage MegaMOSTMFETs IXTK 21N100 IXTN 21N100 VDSS = 1000 V = 21 A ID25 RDS(on) = 0.55 Ω N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 0.9/6 10 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C Maximum Ratings IXTK IXTN 1000 100.

IXTN21N100 Features

* l l l l l l International standard packages JEDEC TO-264, epoxy meet UL 94 V-0 flammability classification miniBLOC, (ISOTOP-compatible) with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance Applications Symbol Test Conditions

IXTN21N100_IXYSCorporation.pdf