IXTN21N100 Datasheet - IXYS Corporation

IXTN21N100, High Voltage MegaMOSTMFETs

High Voltage MegaMOSTMFETs IXTK 21N100 IXTN 21N100 VDSS = 1000 V = 21 A ID25 RDS(on) = 0.55 Ω N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol V.

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IXTN21N100_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTN21N100

Manufacturer:

IXYS Corporation

File Size:

137.17 KB

Description:

High Voltage MegaMOSTMFETs

Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2 4.5 ±200 TJ = 25°C TJ = 125°C 500 2 0.55 V V nA µA mA Ω l l l l VDSS VGH(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 6 mA VDS = VGS, ID = 500 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8
* VDSS VGS

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IXTN21N100 High Voltage MegaMOSTMFETs IXYS Corporation

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