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IXTN30N100L, IXTB30N100L Datasheet - IXYS

IXTB30N100L-IXYS.pdf

This datasheet PDF includes multiple part numbers: IXTN30N100L, IXTB30N100L. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IXTN30N100L, IXTB30N100L

Manufacturer:

IXYS

File Size:

93.59 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXTN30N100L, IXTB30N100L.
Please refer to the document for exact specifications by model.

IXTN30N100L, IXTB30N100L, Power MOSFET

Power MOSFETs with IXTB 30N100L Extended FBSOA IXTN 30N100L N-Channel Enhancement Mode Avalanche Rated VDSS = 1000 V ID25 = 30 A ≤RDS(on) 0.45 Ω Symbol VDSS VDGR V GS VGSM ID25 IDM IAR EAR EAS P D TJ TJM Tstg TL V ISOL Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Maximum Ratings IXTB IXTN PLUS264 (IXTB) 1000 1000 V 1000 1000 V ± 30 ± 40 ± 30 ± 40 V V TC = 25°C TC = 25°C, Pulse width limited by T JM TC = 25°C TC = 25°C TC

IXTN30N100L Features

* Designed for linear operation

* International standard packages

* Molding epoxies meet UL 94 V-0 flammability classification

* SOT-227B miniBLOC with aluminium nitride isolation Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions (TJ = 25°C unless otherwise spe

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