* z International standard package z Rugged PolarPTM process z Avalanche Rated z Low package inductance Applications z Hight side switching z Push-pull amplifiers z DC Choppers z Automatic test equipment © 2008 IXYS CORPORATION, All rights reserved DS99991(05/08) Symbol Test Conditions (TJ = 25°C
IXTN32P60P Datasheet (111.66 KB)
IXTN32P60P
IXYS
111.66 KB
Power mosfet.
Preliminary Technical Information
PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTN32P60P
VDSS ID25
= =
≤RDS(on)
- 600V - 32.
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