IXTN32P60P Datasheet (IXYS)

IXTN32P60P, Power MOSFET

Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTN32P60P VDSS ID25 = = ≤RDS(on) - 600V - 32A 350mΩ Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for

IXTN32P60P Features

* z International standard package z Rugged PolarPTM process z Avalanche Rated z Low package inductance Applications z Hight side switching z Push-pull amplifiers z DC Choppers z Automatic test equipment © 2008 IXYS CORPORATION, All rights reserved DS99991(05/08) Symbol Test Conditions (TJ = 25°C