IXTN102N65X2 Datasheet - IXYS

IXTN102N65X2 Power MOSFET

Advance Technical Information X2-Class Power MOSFET IXTN102N65X2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Mounting Torque for Base Plate Termina.

IXTN102N65X2 Features

* International Standard Package

* miniBLOC with Aluminum Nitride Isolation

* LAovwalaQnGche Rated

* Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS =

IXTN102N65X2-IXYS.pdf