IXTN200N10L2 Datasheet - IXYS

IXTN200N10L2 Power MOSFET

Advance Technical Information Linear L2TM Power MOSFET w/ Extended FBSOA IXTN200N10L2 VDSS ID25 = = ≤RDS(on) 100V 178A 11mΩ N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for .

IXTN200N10L2 Features

* Mini

IXTN200N10L2-IXYS.pdf