IXTP10N60PM Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 0.74Ω@VGS=10V ·100%

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www.DataSheet4U.com Preliminary Technical Information PolarHVTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated

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