IXTP14N60P Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTP14N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 550mΩ@VGS=10V ·Fully characterized avalanche volt

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 550mΩ(Max) ·Fast Sw

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PolarHVTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTP14N60PM VDSS = ID25 = RDS(on)

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PolarTM Power MOSFET Enhancement Mode Avalanche Rated IXTA14N60P IXTP14N60P IXTQ14N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL

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