IXTP18N60PM Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 420mΩ(Max) ·Fast Sw

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PolarTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXTP18N60PM VDSS = ID25 = RDS(on) ≤ 600V 9A 420mΩ OVER

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