IXTP1N100 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 15Ω@VGS=10V ·Fully characterized avalanche voltage and curren

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1N100P IXTA1N100P IXTP1N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD

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isc N-Channel MOSFET Transistor IXTP1N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 15Ω@VGS=10V ·Fully characterized avalanche voltag

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Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N100 IXTP 1N100 VDSS ID25 RDS(on) = 100

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