IXTP200N085T Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTP200N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche vo

(22 views)

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA 200N085T IXTP 200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS

(21 views)