PolarTM Power MOSFET N-Channel Enhancement Mode Av.
IXTP2N60P - Power MOSFET
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2N60P IXTP2N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg .IXTP2N60P - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXTP2N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.1Ω@VGS=10V ·Fully characterized avalanche voltag.