IXTP32N20T Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTP32N20T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 78mΩ@VGS=10V ·Fully characterized avalanche volta

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TrenchTM Power MOSFET IXTA32N20T IXTP32N20T VDSS = 200V ID25 = 32A RDS(on) ≤ 78mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifi

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