IXTP60N10T Datasheet | Specifications & PDF Download

IXTP60N10T Power MOSFET

TrenchTM Power MOSFET IXTA60N10T IXTP60N10T N-Ch.

isc N-Channel MOSFET Transistor IXTP60N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche volta

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TrenchTM Power MOSFET IXTA60N10T IXTP60N10T N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL

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