IXTP60N20T Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTP60N20T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 40mΩ@VGS=10V ·Fully characterized avalanche volta

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TrenchTM Power MOSFET IXTA60N20T IXTP60N20T IXTQ60N20T VDSS ID25 RDS(on) = 200V = 60A ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP

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