Preliminary Technical Information Trench Gate Pow.
IXYS Corporation
IXTQ200N075T - Power MOSFET
Preliminary Technical Information Trench Gate Power MOSFET IXTH200N075T IXTQ200N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(.
INCHANGE
IXTQ200N075T - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5mΩ(Max) ·Fast Switc.
