IXTU1R4N60P Datasheet | Specifications & PDF Download

IXTU1R4N60P Power MOSFET

PolarTM Power MOSFET N-Channel Enhancement Mode Av.

isc N-Channel MOSFET Transistor IXTU1R4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V ·Fully characterized avalanche volt

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt

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