IXTV250N075T Datasheet | Specifications & PDF Download

IXTV250N075T Power MOSFET

Preliminary Technical Information TrenchMVTM Powe.

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) ·Fast Switc

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTV250N075T IXTV250N075TS N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTV250N075T IXTV250N075TS N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(

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