High Voltage Power MOSFET N-Channel Enhancement Mo.
IXYS
IXTY05N100 - Power MOSFET
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU05N100 IXTY05N100 VDSS = ID25 = RDS(on) 1000V 750mA 17 TO-251 (IXTU) .
INCHANGE
IXTY05N100 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXTY05N100 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 17Ω@VGS=10V ·Fully characterized avalanche voltag.
