PolarTM Power MOSFET N-Channel Enhancement Mode Av.
IXYS
IXTY1R4N60P - Power MOSFET
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt.
INCHANGE
IXTY1R4N60P - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXTY1R4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V ·Fully characterized avalanche volt.