IXTY2N60P Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTY2N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.1Ω@VGS=10V ·100% avalanche tested ·Minimum Lot-t

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2N60P IXTP2N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg

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