Infineon Technologies Datasheet | Specifications & PDF Download

Datasheet,Version 2.1, August 30, 2011 ® Never stop thinking. CoolSET® - Q1 ICE2QR2280Z Revision History: August 30, 2011 Previous Version: Page

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IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW50N60H3 600V high speed switching ser

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IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKZ75N65EH5 650V DuoPack IGBT and diode Hig

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www.DataSheet4U.com Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Car

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SKW07N120 www.DataSheet4U.com Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • Lower Eoff compared to previous genera

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OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) prod

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IGW50N60T TRENCHSTOP™ Series Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junctio

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IHW20N120R2 Soft Switching Series www.DataSheet4U.com Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.2 Final Powe

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TrenchStop® Series IGW40T120 Low Loss IGBT in TrenchStop® and Fieldstop technology C  Short circuit withstand time – 10s  Designed for : - Freq

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Version 2.1, 30 Aug 2011 ® Never stop thinking. ICE3BR4765JZ Revision History: 2011-8-30 Previous Version: V2.0 Page 27 Subjects (major changes

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CoolMOS® Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accord

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IKW30N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.2 Final Powe

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SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low c

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PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types

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www.DataSheet4U.com IPB09N03LA IPI09N03LA, IPP09N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel •

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