Infineon Technologies Datasheet | Pinout, Features, Price Comparison & PDF

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Datasheet,Version 2.1, August 30, 2011 ® Never stop thinking. CoolSET® - Q1 ICE2QR2280Z Revision History: August 30, 2011 Previous Version: Page

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW50N60H3 600V high speed switching ser

TrenchStop® Series IGW40T120 Low Loss IGBT in TrenchStop® and Fieldstop technology C  Short circuit withstand time – 10s  Designed for : - Freq

CoolMOS® Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accord

Version 2.5, 09 Nov 2019 CCM-PFC ICE2PCS02 ICE2PCS02G Standalone Power Factor Correction (PFC) Controller in Continuous Conduction Mode (CCM) with Inp

Datasheet, Version 2.3, 02 Apr 2013 C o ol SE T ™ -F3 ICE3A(B)0365/0565/1065/1565 ICE3A(B)2065/2565 ICE3A0565Z/2065Z ICE3A(B)2065I/3065I/3565I ICE3A(B

www.DataSheet4U.com Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Car

IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

IHW20N120R2 Soft Switching Series www.DataSheet4U.com Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode

Version 2.1, 30 Aug 2011 ® Never stop thinking. ICE3BR4765JZ Revision History: 2011-8-30 Previous Version: V2.0 Page 27 Subjects (major changes

OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) prod

Datasheet, V2.10a, 25 Mar 2014 CoolSET™-F2 ICE2A0565/165/265/365 ICE2B0565/165/265/365 ICE2A0565G ICE2A0565Z ICE2A180Z/280Z ICE2A765I/2B765I ICE2A765P

SKW07N120 www.DataSheet4U.com Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • Lower Eoff compared to previous genera

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic a

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.2 Final Powe

IKW30N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

Low Power Hall Switch TLE 4913 Features • Micro power design • 2.4 V to 5.5 V battery operation • High sensitivity and high stability of the magnet

Da ta s h e e t, Ve rs i o n 2 . 2, Ju l y 4 , 2 0 1 1 Q u a s i- R e s o na n t C on t r o ll er PWM Po we r M an a ge me nt & Su pp l y N e v e

IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKZ75N65EH5 650V DuoPack IGBT and diode Hig