JCS650S Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor JCS650S FEATURES ·Drain Current –ID= 28A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Res

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N N- CHANNEL MOSFET R JCS650 MAIN CHARACTERISTICS ID 28.0A VDSS 200 V Rdson-max （@Vgs=10V） 85mΩ Qg-typ 103nC Package    UPS APPL

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