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JILIN SINO-MICROELECTRONICS
D13009K - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009K MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) PC(TO-3PB) 12A 400V 100W 120W.
JILIN SINO-MICROELECTRONICS
D13007M - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007M MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 8A 400V 80W z z z z z .
JILIN SINO
D1555 - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max.
JILIN SINO-MICROELECTRONICS
D13007MD - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13007MD IC VCEO PC(TO-262/220C) MAIN CHARACTERISTICS 8A 400V 80W Package z z z z z .
Jilin Sino
HBR10150S - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃） APPLICATIONS .
JILIN SINO-MICROELECTRONICS
3DD5017 - CASE-RATED BIPOLAR TRANSISTOR
R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017 FOR LOW FREQUENCY 3DD5017 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»ú¿.
JILIN SINO
D13005MD - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13005MD IC VCEO PC(TO-220HF) PC(TO-220) MAIN CHARACTERISTICS 4A 400V 35W 75W Package .
JILIN SINO-MICROELECTRONICS
JCS1404 - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS1404 MAIN CHARACTERISTICS Package ID 204 A VDSS 40 V Rdson（@Vgs=10V） 4 mΩ z z UPS APPLICATIONS z High efficiency.
Jilin Sino
HBR5150 - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR5150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 5A 150 V 175 ℃ 0.75V （@Tj=125℃） l 、 l APPLICATIONS l .
JILIN SINO
BT136 - TRIACS
R TRIACS BT136 MAIN CHARACTERISTICS IT(RMS) VDRM IGT 4A 600V or 800V 10mA z z APPLICATIONS z AC switching z Phase control Package Pin 1 .
JILIN SINO
2SC5198 - Silicon NPN Transistor
NPN Silicon NPN Triple Diffused Transistor R 2SC5198 VCEO=140V (min) 2SA1941 70W RoHS APPLICATIONS Power Amplifier Applications FEATURES High collec.
JILIN SINO
SPE02M50T-C - Intelligent Power Module
Intelligent Power Module SPE02M50T-A_C ： 500V,2A（）， 1.2A（） MOSFET ： Main Function Parameter： and 500V,2A(Peak),1.2A(Continuou .
JILIN SINO
HBR10100S - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR10100S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 100 V 175 ℃ 0.7V （@Tj=125℃） l l APPLICATIONS l High.
JILIN SINO
2SC5200A - Silicon NPN Transistor
NPN Silicon NPN Triple Diffused Transistor R 2SC5200A APPLICATIONS Power Amplifier Applications ：VCEO=230V (min) 2SA1943A 100W （Ro.
Jilin Sino-microelectronics
3DD4202BD - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD4202BD IC VCEO PC(TO-92) PC(TO-251) PC(TO-126) MAIN CHARACTERISTICS 1.5A 400V 1W 10W 20.
Jilin Sino
HBR10200 - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI.
JILIN SINO-MICROELECTRONICS
JCS4N70C - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS4N70C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 700 V Rdson（Vgs=10V） 2.8Ω Qg 14nC z z z UPS APPLICATIONS z High f.
JILIN SINO-MICROELECTRONICS
JCS3205CH - N-CHANNEL MOSFET
N N-CHANNEL MOSFET R JCS3205H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ UPS 110 A 55 V 8 mΩ 78nC APPLICATIONS H.
JILIN SINO
2SC5200B - Silicon NPN Transistor
NPN Silicon NPN Triple Diffused Transistor R 2SC5200B z z：VCEO=250V (min) z 2SA1943B z 100W z（RoHS） APPLICATIONS z Power Amplifier Application.
