.
JINAN JINGHENG
2N60 - 600V N-Channel Power MOSFET
R SEMICONDUCTOR 2N60 600V N-Channel Power MOSFET FEATURES ● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in compliance with .
JINAN JINGHENG
4N65 - 650V N Channel Power MOSFET
R SEMICONDUCTOR 4N65 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<2.4Ω @ VGS=10V ● Fast switching capability ● Lead free in compliance with EU RoH.
JINAN JINGHENG
7N65 - 650V N Channel Power MOSFET
R SEMICONDUCTOR 7N65 7N65F 7N65D 7N65E 7N65M 7N65N 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<1.5Ω @ VGS=10V ● Fast switching capability ● Low g.
JINAN JINGHENG
MB10F - SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
R SEMICONDUCTOR FEATURES MB1F THRU MB10F SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage: 100 to 1000 Volts Forward Current: 0.8 Amps.
JINAN JINGHENG
1N5347 - 5W SILICON PLANAR ZENER DIODES
R SEMICONDUCTOR 1N5342 THRU 1N5388 5W SILICON PLANAR ZENER DIODES FEATURES Low leakage, low zener impedance at low current Maximum power dissipation.
JINAN JINGHENG
D92-02 - Fast recovery diode
D92-02 ( Tj=25℃） （） f=60Hz L=1mH t=8.3ms Tstg Tj VRRM IFSM IF(AV)（） IF(AV)（） IO（） EAS（） -40to+150 150 200 150 10 20 10 20 ℃ ℃ V .
JINAN JINGHENG
1N5359 - 5W SILICON PLANAR ZENER DIODES
R SEMICONDUCTOR 1N5342 THRU 1N5388 5W SILICON PLANAR ZENER DIODES FEATURES Low leakage, low zener impedance at low current Maximum power dissipation.
JINAN JINGHENG
1N5349 - 5W SILICON PLANAR ZENER DIODES
R SEMICONDUCTOR 1N5342 THRU 1N5388 5W SILICON PLANAR ZENER DIODES FEATURES Low leakage, low zener impedance at low current Maximum power dissipation.
JINAN JINGHENG
MUR2020 - GLASS PASSIVATED SUPER FAST RECTIFIER
R SEMICONDUCTOR MUR2020 THRU MUR2060 GLASS PASSIVATED SUPER FAST RECTIFIER Reverse Voltage - 200 -600 Volts Forward Current - 20.0Amperes FEATURES .
JINAN JINGHENG
7N65F - 650V N Channel Power MOSFET
R SEMICONDUCTOR 7N65 7N65F 7N65D 7N65E 7N65M 7N65N 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<1.5Ω @ VGS=10V ● Fast switching capability ● Low g.
JINAN JINGHENG
7N65M - 650V N Channel Power MOSFET
R SEMICONDUCTOR 7N65 7N65F 7N65D 7N65E 7N65M 7N65N 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<1.5Ω @ VGS=10V ● Fast switching capability ● Low g.
JINAN JINGHENG
1N5368 - 5W SILICON PLANAR ZENER DIODES
R SEMICONDUCTOR 1N5342 THRU 1N5388 5W SILICON PLANAR ZENER DIODES FEATURES Low leakage, low zener impedance at low current Maximum power dissipation.
JINAN JINGHENG
2N60F - 600V N-Channel Power MOSFET
R SEMICONDUCTOR 2N60 600V N-Channel Power MOSFET FEATURES ● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in compliance with .
JINAN JINGHENG
1N5388 - 5W SILICON PLANAR ZENER DIODES
R SEMICONDUCTOR 1N5342 THRU 1N5388 5W SILICON PLANAR ZENER DIODES FEATURES Low leakage, low zener impedance at low current Maximum power dissipation.
JINAN JINGHENG
1N5384 - 5W SILICON PLANAR ZENER DIODES
R SEMICONDUCTOR 1N5342 THRU 1N5388 5W SILICON PLANAR ZENER DIODES FEATURES Low leakage, low zener impedance at low current Maximum power dissipation.
JINAN JINGHENG ELECTRONICS
MUR880 - GLASS PASSIVATED SUPER FAST RECTIFIER
R SEMICONDUCTOR MUR880 GLASS PASSIVATED SUPER FAST RECTIFIER Reverse Voltage - 800 Volts Forward Current - 8.0Amperes FEATURES Plastic package has .
JINAN JINGHENG
2N60E - 600V N-Channel Power MOSFET
R SEMICONDUCTOR 2N60 600V N-Channel Power MOSFET FEATURES ● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in compliance with .
JINAN JINGHENG
SR1040 - SCHOTTKY BARRIER RECTIFIER
R SEMICONDUCTOR SR1020 THRU SR10200(SINGLE CHIP) SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 10.0Amperes FEATURES.
JINAN JINGHENG
HER608 - HIGH EFFICIENCY RECTIFIER
R SEMICONDUCTOR HER601 THRU HER608 HIGH EFFICIENCY RECTIFIER Reverse Voltage: 50 to 1000 Volts Forward Current:6.0Amperes FEATURES R-6 Plastic pac.
JINAN JINGHENG
1N5352 - 5W SILICON PLANAR ZENER DIODES
R SEMICONDUCTOR 1N5342 THRU 1N5388 5W SILICON PLANAR ZENER DIODES FEATURES Low leakage, low zener impedance at low current Maximum power dissipation.