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ഀ‫ݾ‬Ԩা CD7388CZ 4u41W ୺к࿛ູٟ৑ׂӖԨা 1ǃὖ ᴀ᭭⫼ೈ˖CD7388CZ CD7388 ᰃϔഫ⫼Ѣッ≑䷇ડⱘಯ BTL ߎⱘ AB ㉏ࡳ⥛ᬒ໻⬉DŽ ݊⡍⚍བϟ˖ Ɣ ࡳ⥛ߎ࡯˄᳔໻ 4u41W/4ȍ˗4u25W/4ȍ @ 14.4Vˈ1kHzˈ10%˅ Ɣ ༅

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Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) I

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Silicon N-Channel Power MOSFET ○R CS150N04 A8 General Description： CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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Silicon N-Channel Power MOSFET CS13J65 A0-G ○R General Description： CS13J65 A0-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super j

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Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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CD2003GP/GB FM/AM RADIO IC 1、 Overvie w The CD2003GP/GB is a monolithic IC designed for use as a FM/AM radio system. Combined with audio power amplifi

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CD2003GP/GB FM/AM RADIO IC 1、 Overvie w The CD2003GP/GB is a monolithic IC designed for use as a FM/AM radio system. Combined with audio power amplifi

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Shenzhen Jingdao Electronic Co.,Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn 16F020C * ： ，UPS DC-DC * ： ： A1. K. A2

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Silicon N-Channel Power MOSFET CS13N50 A8R ○R General Description： CS13N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Silicon N-Channel Power MOSFET CS1N80 A1H ○R General Description： CS1N80 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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R SEMICONDUCTOR 1N4727 THRU 1N4764 1W SILICON PLANAR ZENER DIODES FEATURES DO-41(GLASS) Silicon planar power zener diode For use in stabilizing an

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Silicon FS Planar IGBT BT15T120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 120

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SHENZHEN YANGJING MICROELECTRONICS CO.,LTD 1A LOW DROPOUT LINEAR REGULATOR GENERAL DESCRIPTION The 1117 is a series of low dropout three-terminal egul

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Charge Pump DC-DC Voltage Converter CE7660 Charge Pump DC-DC Voltage Converter CE7660 CE7660 is a charge pump dc-to-dc voltage converter using Si-

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Silicon N-Channel Power MOSFET CS830 A4RD ○R General Description： CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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CD1619CB 1、 CD1619CB 、、。 ： ● ：VCC=3V ，FM：ICCQ=5.3mA；AM：ICCQ=3.4mA（） ● FM/AM ● ：VCC=6V，RL=8Ω，PO=500mW（） ● AFC ● RF AGC、IF AGC ● LED ● ● ：S

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Silicon N-Channel Power MOSFET CS100N03 B4 ○R General Description： CS100N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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N 2CZ10150 A9 ○R 2CZ10150 A9 ， 。 、 、。 ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 150 2×5 0.90 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per Di

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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. BU3150 Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Computer aided powe

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