K176 Datasheet | Specifications & PDF Download

2SK1762 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High speed switch

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2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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Микросхема К176ИЕ12 Полупроводниковые интегральные микросхемы К176ИЕ12 предназначены для использования в качестве двоичного счетчика на 60 и 15-ти раз

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K561,К564,К176, К561ТМ2 Тип микросхемы К561ТМ2 Фирма производитель СНГ Функциональное назначение2 D-триггера T,C -10 +70 Vdd min Vdd max,В

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2SK1762 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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2SK1764 Silicon N-Channel MOS FET Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 3.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lo

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2SK1762 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No

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2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Fast Switching Speed ·Minimum Lot

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

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