K2396 Datasheet | Specifications & PDF Download

N MOS UHF TV MOS Silicon Power MOS Field Effect Transistor 2SK2396A UHF PO = 100 W, GL = 12 dB, h D = 50 TYP VDD = 30 V, f = 860 MHz, IDQ = 150 m

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N MOS UHF TV MOS Silicon Power MOS Field Effect Transistor 2SK2396A UHF PO = 100 W, GL = 12 dB, h D = 50 TYP VDD = 30 V, f = 860 MHz, IDQ = 150 m

(5 views)

(5 views)