K2396A
195.78 KB
Silicon power mos fet.
N MOS UHF TV MOS Silicon Power MOS Field Effect Transistor 2SK2396A UHF PO = 100 W, GL = 12 dB, h D = 50 TYP VDD = 30 V, f = 860 MHz, IDQ = 150 m.
📁 Related Datasheet
K2396 Silicon Power MOS FET (Renesas)
K2391 Field Effect Transistor (Toshiba Semiconductor)
K2394 N-Channel Junction Silicon FET (Sanyo Semicon Device)
K2394 N-Channel JFET (ON Semiconductor)
K2395 N-Channel Junction Silicon FET (Sanyo Semicon Device)
K2398 Field Effect Transistor (Toshiba)
K2399 Field Effect Transistor (Toshiba Semiconductor)
K2312 2SK2312 (Toshiba Semiconductor)
K2312 N-Channel 60V MOSFET (VBsemi)
K2313 2SK2313 (Toshiba Semiconductor)
