K2398 Datasheet (Toshiba) - Field Effect Transistor

K2398, Field Effect Transistor

2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2398 DC DC Converter and Motor Drive Applications Unit: mm l Low drain source ON resistance : RDS (ON) = 22 mΩ (typ.) l High forward transfer admittance : |Yfs| = 27 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) l Enhancement mode : Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Drain