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K2398 Datasheet - Toshiba

K2398 Field Effect Transistor

2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2398 DC DC Converter and Motor Drive Applications Unit: mm l Low drain source ON resistance : RDS (ON) = 22 mΩ (typ.) l High forward transfer admittance : |Yfs| = 27 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) l Enhancement mode : Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Drain

K2398 Datasheet (317.76 KB)

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Datasheet Details

Part number:

K2398

Manufacturer:

Toshiba ↗

File Size:

317.76 KB

Description:

Field effect transistor.

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K2398 Field Effect Transistor Toshiba

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