2SK2959 Silicon N Channel MOS FET High Speed Power.
Hitachi Semiconductor
3
K2959 - Silicon N Channel MOS FET
2SK2959 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 7mΩ typ. • 4V gate drive devices. • High speed sw.
Hitachi Semiconductor
1
2SK2959 - Silicon N Channel MOS FET
2SK2959 Silicon N Channel MOS FET High Speed Power Switching ADE-208-569C (Z) 4th. Edition Aug 1998 Features • Low on-resistance R DS(on) = 7mΩ typ. .