K2959 - Silicon N Channel MOS FET

Hitachi Semiconductor

Datasheet Details

Low on-resistance RDS(on) = 7mΩ typ.
4V gate drive devices.
High speed switching Outline TO.
220AB D G S ADE-208-569C (Z) 4th. Edition Aug 1998 1 2 3 1. Gate 2. Drain(Flange 3. Source 2SK2959 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Note2 Channel temperature Tch St.

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