K2929 Datasheet, 2sk2929, Hitachi Semiconductor

K2929 Features

• 2sk2929
• Low on-resistance R DS =0.026 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source Outline TO
    –220AB D G 1 2 S

PDF File Details

Part number:

K2929

Manufacturer:

Hitachi Semiconductor

File Size:

51.50kb

Download:

📄 Datasheet

Description:

2sk2929.

TAGS

K2929

Hitachi Semiconductor

📁 Related Datasheet

K2925 - Silicon N-Channel MOSFET (Hitachi)
2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.060 Ω typ. • High speed switching • 4V.

K2926 - 2SK2926 (Hitachi Semiconductor)
2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.042Ω typ. • 4V gate drive device.

K2900-01 - N-channel MOS-FET (Fuji Electric)
> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 2SK2900-01 FAP-IIIB Series N-channel MO.

K2902-01MR - 2SK2902-01MR (Fuji Electric)
2SK2902-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof .

K2915 - 2SK2915 (Toshiba Semiconductor)
2SK2915 .. TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2915 Chopper Regulator, DC−DC Converter and Motor.

K2917 - 2SK2917 (Toshiba Semiconductor)
2SK2917 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2917 Chopper Regulator, DC−DC Converter and Motor Drive Applications z.

K2919 - 2SK2919 (Sanyo)
Ordering number:ENN6121 N-Channel Silicon MOSFET 2SK2919 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed swit.

K2930 - 2SK2930 (Hitachi Semiconductor)
2SK2930 Silicon N Channel MOS FET High Speed Power Switching ADE-208-553C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =0.020 Ω typ. •.

K2936 - 2SK2936 (Hitachi Semiconductor)
.DataSheet.co.kr 2SK2936 Silicon N Channel MOS FET High Speed Power Switching ADE-208-559B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance.

K2936 - Silicon N Channel MOS FET (Renesas)
2SK2936 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive de.