Part number:
K2925
Manufacturer:
Hitachi
File Size:
51.47 KB
Description:
Silicon n-channel mosfet.
* Low on-resistance RDS =0.060 Ω typ.
* High speed switching
* 4V gate drive device can be driven from 5V source Outline ADE-208-549C (Z) 4th. Edition Jun 1998 DPAK
* 2 44 D G S 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2925(L),2SK2925(S) Absolute Maximum
K2925
Hitachi
51.47 KB
Silicon n-channel mosfet.
📁 Related Datasheet
K2925 - N-Channel 60V MOSFET
(VBsemi)
K2925-VB
K2925-VB Datasheet
N-Channel 60 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) 60
RDS(on) () Max. 0.073 at VGS = 10 V 0.085 at V.
K2926 - 2SK2926
(Hitachi Semiconductor)
2SK2926(L), 2SK2926(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.042Ω typ.
• 4V gate drive device.
K2929 - 2SK2929
(Hitachi Semiconductor)
2SK2929
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-552C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.026 Ω typ. •.
K2900-01 - N-channel MOS-FET
(Fuji Electric)
> Features
- High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated
2SK2900-01
FAP-IIIB Series
N-channel MO.
K2902-01MR - 2SK2902-01MR
(Fuji Electric)
2SK2902-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
.
K2915 - 2SK2915
(Toshiba Semiconductor)
2SK2915
..
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2915
Chopper Regulator, DC−DC Converter and Motor.
K2917 - 2SK2917
(Toshiba Semiconductor)
2SK2917
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2917
Chopper Regulator, DC−DC Converter and Motor Drive Applications
z.
K2919 - 2SK2919
(Sanyo)
Ordering number:ENN6121
N-Channel Silicon MOSFET
2SK2919
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed swit.
