Part number:
K2958
Manufacturer:
Hitachi Semiconductor
File Size:
50.30 KB
Description:
2sk2958.
* Low on-resistance RDS(on) = 5.5mΩ typ.
* 4V gate drive devices.
* High speed switching Outline LDPAK D G S ADE-208-568B (Z) 3rd. Edition Jun 1998 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2958(L),2SK2958(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbo
K2958
Hitachi Semiconductor
50.30 KB
2sk2958.
📁 Related Datasheet
K2950M - IF Filter
(Siemens)
.
K2952 - 2SK2952
(Toshiba)
2SK2952
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2952
Chopper Regulator Applications
Unit: mm
l Low drain−source ON r.
K2953 - 2SK2953
(Toshiba Semiconductor)
..
..
..
..
..
.
K2955M - IF Filter
(EPCOS)
SAW Components
Data Sheet K 2955 M
..
SAW Components IF Filter for Intercarrier Applications Data Sheet
Standard
s B/G s D/K
K 2955.
K2956 - Silicon N-Channel MOSFET
(Renesas)
2SK2956
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 7 mΩ typ.
• 4 V gate drive devices. • High speed s.
K2957 - 2SK2957
(Renesas)
2SK2957(L), 2SK2957(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1057-0600 (Previous: ADE-208-567D) Rev.6.00 Sep 07, 2005
Features
•.
K2959 - Silicon N Channel MOS FET
(Hitachi Semiconductor)
2SK2959
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 7mΩ typ.
• 4V gate drive devices. • High speed sw.
K2900-01 - N-channel MOS-FET
(Fuji Electric)
> Features
- High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated
2SK2900-01
FAP-IIIB Series
N-channel MO.
