K2950M
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K2952 - 2SK2952
(Toshiba)
2SK2952
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2952
Chopper Regulator Applications
Unit: mm
l Low drain−source ON r.
K2953 - 2SK2953
(Toshiba Semiconductor)
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K2955M - IF Filter
(EPCOS)
SAW Components
Data Sheet K 2955 M
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SAW Components IF Filter for Intercarrier Applications Data Sheet
Standard
s B/G s D/K
K 2955.
K2956 - Silicon N-Channel MOSFET
(Renesas)
2SK2956
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 7 mΩ typ.
• 4 V gate drive devices. • High speed s.
K2957 - 2SK2957
(Renesas)
2SK2957(L), 2SK2957(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1057-0600 (Previous: ADE-208-567D) Rev.6.00 Sep 07, 2005
Features
•.
K2958 - 2SK2958
(Hitachi Semiconductor)
2SK2958(L),2SK2958(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 5.5mΩ typ.
• 4V gate drive devices..
K2959 - Silicon N Channel MOS FET
(Hitachi Semiconductor)
2SK2959
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 7mΩ typ.
• 4V gate drive devices. • High speed sw.
K2900-01 - N-channel MOS-FET
(Fuji Electric)
> Features
- High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated
2SK2900-01
FAP-IIIB Series
N-channel MO.
K2902-01MR - 2SK2902-01MR
(Fuji Electric)
2SK2902-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
.
K2915 - 2SK2915
(Toshiba Semiconductor)
2SK2915
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2915
Chopper Regulator, DC−DC Converter and Motor.
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