K319 Datasheet | Specifications & PDF Download

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2SK3199 Absolute Maximum Ratings Symbol VDSS VGSS www.datasheet4u.com ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 500 ± 30 ±5 ± 20 30 (Tc = 25ºC)

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK319 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Volt

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Power MOSFETs 2SK3192 Silicon N-channel power MOSFET Unit: mm (0.7) ■ Features • Avalanche energy capability guaranteed • High-speed switching • Low

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isc N-Channel MOSFET Transistor 2SK3199 FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resi

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3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602(Z) 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4

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Power MOSFETs 2SK3192 Silicon N-channel power MOSFET Unit: mm (0.7) ■ Features • Avalanche energy capability guaranteed • High-speed switching • Low

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www.DataSheet4U.com șȒȅȓȋǷഽࢹÅୋܹ࢘‫ܩ‬ྈ໤Å    ÅSDQDVRQLF GHQNRFRMSDF www.DataSheet4U.com Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω ΩΩ ΩΩ ΩΩ ΩΩ ΩΩ ΩΩ ΩΩ

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK319 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Volt

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2SK3199 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 500 ± 30 ±5 ± 20 30 (Tc = 25ºC) 35 5 150 –55 to +15

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