3SK319 - UHF RF Amplifier

Datasheet Summary

Features

Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz).
Excellent cross modulation characteristics.
Capable low voltage operation; +B= 5V Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is “YB.
”. 3SK319 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch.

Hitachi Semiconductor

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Datasheet Details

Part number	3SK319
Manufacturer	Hitachi Semiconductor
File Size	49.88 KB
Description	UHF RF Amplifier
Datasheet	3SK319 Datasheet
Additional preview pages of the 3SK319 datasheet.

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Full PDF Text Transcription

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3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602(Z) 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is “YB–”.

Published: Mar 30, 2005 |