3SK319 Overview
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602(Z) 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V Outline
3SK319 Key Features
- Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz)
- Excellent cross modulation characteristics
- Capable low voltage operation; +B= 5V