3SK317 Description
3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 (Z) 1st.
3SK317 Key Features
- Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz)
- High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz)