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3SK318 Datasheet Uhf Rf Amplifier

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600(Z) 1st.

Key Features

  • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz).
  • Excellent cross modulation characteristics.
  • Capable low voltage operation; +B= 5V Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is “YB.
  • ”. 3SK318 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch.

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