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3SK318 - UHF RF Amplifier

Key Features

  • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz).
  • Excellent cross modulation characteristics.
  • Capable low voltage operation; +B= 5V Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is “YB.
  • ”. 3SK318 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

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3SK317 UHF / VHF RF Amplifier
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600(Z) 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is “YB–”.