K342 Datasheet | Specifications & PDF Download

S32K3XX S32K3xx Data Sheet Supports S32K344, S32K324, S32K314, S32K312, S32K311, S32K310, S32K341, S32K342, S32K322, S32K328, S32K338, S32K348, S32

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ACPL-H342 and ACPL-K342 2.5 Amp Output Current IGBT Gate Drive Optocoupler with Active Miller Clamp, Rail-to-Rail Output Voltage and UVLO in Stretched

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Minebea-Matsushita Motor Corporation eMINEBEA. COM Outline • LEAD WIRE SIDE -HSG: PHR-6 -PIN : SPH-002T-P0.5S JST S6B-PH-K-S-2.2 17 (0.67) 15 (0.59

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Minebea-Matsushita Motor Corporation eMINEBEA. COM Outline • LEAD WIRE SIDE -HSG: PHR-6 -PIN : SPH-002T-P0.5S JST S6B-PH-K-S-2.2 17 (0.67) 15 (0.59

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isc N-Channel MOSFET Transistor 2SK3424 FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Res

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Datasheet Voltage Detector IC Series Counter Timer Built-in CMOS Voltage Detector IC BU45Kxxxx, BU46Kxxxx, BU45Lxxxx, BU46Lxxxx series ●General Des

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3424 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3424 is N-Channel MOS FET device t

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Silicon Junction FETs (Small Signal) 2SK3426 Silicon N-Channel Junction For impedance conversion in low frequency For electret capacitor microphone I

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isc N-Channel MOSFET Transistor 2SK3424-ZK FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-

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isc N-Channel MOSFET Transistor 2SK3424-ZJ FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-

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Datasheet Voltage Detector IC Series Counter Timer Built-in CMOS Voltage Detector IC BU45Kxxxx, BU46Kxxxx, BU45Lxxxx, BU46Lxxxx series ●General Des

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SMD Type MOS Field Effect Transistor 2SK3424 MOSFET Features 4.5-V drive available Low on-state resistance RDS(on)1 = 1.5m MAX. (VGS = 10 V, ID = 2

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Silicon Junction FETs (Small Signal) 2SK3427 Silicon N-Channel Junction For impedance conversion in low frequency For electret capacitor microphone I

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GSFK3420 30V N-Channel + P-Channel Complementary MOSFETs Main Product Characteristics S2 G2 BVDS 30V -30V D1 G1 RDS(ON) 450mΩ 1000mΩ ID 800mA

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