Description
GSFK3420 30V N-Channel + P-Channel Complementary MOSFETs Main Product Characteristics S2 G2 BVDS 30V -30V D1 G1 RDS(ON) 450mΩ 1000mΩ ID 800mA.
The GSFK3420 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switch mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous(TC=25°C) Drain Current-Continuous(TC=100°C) Drain Current-Pulsed1 Power Dissipation(TC=25°C) Power Dissipation-Derate Above 25°C Thermal Resistance, Junction-t