Description
GSFK0502 50V Dual N-Channel MOSFETs Main Product Characteristics BVDSS 50V D1 G2 RDS(ON) ID 1.3Ω @10V (Typ) 1.5Ω @4.5V (Typ) 0.3A S1 G1 D2 S2 .
The GSFK0502 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Symbol
Max. Drain-Source Voltage
V(BR)DSS
50
Gate-Source Voltage
VGS
±12
Drain Current-Continuous (TA=25°C) Drain Current-Continuous (TA=70°C) Drain Current-Pulsed (TA=25°C)1 Power Dissipation (TA=25°C) Power Dissipa