Description
Main Product Characteristics BV(DSS RDS(ON) 20V 40mΩ ID 5A .
The GSF0206 utilizes the latest techniques to achieve high cell densit and lo on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings. 5
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous(TC=25°C) Drain Current-Continuous(TC=100°C) Drain Current-Pulsed1 Power Dissipation(TC=25°C) Power Dissipation-Derate Above 25°C Thermal Resistance, Junction-to-Ambient Storage Temperature Range