Description
Main Product Characteristics V(BR)DSS 60V GSFD6046 60V N-Channel MOSFET D RDS(ON) 35mΩ (typ.) ID 20A .
The GSFD6046 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Symbol
Max. Unit
Drain-Source Voltage
VDS
60
V
Gate-to-Source Voltage Continuous Drain Current, @ Steady-State (TA=25°C)1 Continuous Drain Current, @ Steady-State (TA=70°C) Pulsed Drain Current2 Power Dissipation (TA=