Description
Main Product Characteristics D BVDSS -25V RDS(ON) ID 640mΩ -0.85A .
The GSFC02501 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TJ=25°C unless otherwise specified)
Parameter
Symbol
Max. Drain-Source Voltage
VDS
-25
Gate-Source Voltage
VGS
±8
Drain Current-Continuous (TA=25°C)1,3 Drain Current-Continuous (TA=70°C)1,3
-0.85 ID
-0.68
Drain Current-Pulsed2
IDM
-2.1
Power Dissipation (TA