Description
Main Product Characteristics BVDSS 50V D RDS(ON) ID 1.6Ω 360mA S G SOT-523 .
The GSF0500AT utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Symbol
Max. Drain-Source Voltage
VDS
50
Gate-Source Voltage
VGS
±20
Drain Current-Continuous1
ID
360
Single Pulse Avalanche Energy4
EAS
0.2
Power Dissipation1
PD
0.15
Thermal Resistance, Junction-to-Air1
Rθ