Description
Main Product Characteristics BVDSS 40V RDS(ON) ID 33Ω (max.) 5A GSF0406 40V N-Channel MOSFET D D S G SOT-23 G S Schematic Diagram .
The GSF0406 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous (TC=25°C) Drain Current-Continuous (TC=100°C) Drain Current-Pulsed1 Power Dissipation (TC=25°C) Power Dissipation-Derate above 25°C Thermal Resistance, Junctio