Description
Main Product Characteristics BVDSS 25V D RDS(ON) ID 230mΩ 0.7A S G .
The GSFC0201 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* SOT-23
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter
Symbol
Max. Drain-Source Voltage
VDS
25
Gate-Source Voltage
VGS
±8
Drain Current-Continuous (TA=25°C)1,3 Drain Current-Continuous (TA=70°C)1,3
0.7 ID
0.45
Drain Current-Pulsed2
IDM
2.5
Diode Continuous Forward C