Description
Main Product Characteristics GSFF0308 30V N-Channel MOSFET D BVDSS 30V D RDS(ON) 450mΩ G ID 780mA .
The GSFF0308 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current(TA=25°C) Drain Current(TA=70°C) Pulsed Drain Current1 Power Dissipation (TA=25°C) Power Dissipation
* Derate above 25°C Thermal Resistance, Junction-to-Ambient Op